Methods to fabricate chamber component using laser drilling

ABSTRACT

Embodiments of a method of forming one or more holes in a substrate for use as a process chamber component are provided herein. In some embodiments, a method of forming one or more holes in a substrate for use as a process chamber component include forming the one or more holes in the substrate with one or more laser drills using at least one of a percussion drilling, a trepanning, or an ablation process, wherein each of the one or more holes have an aspect ratio of about 1:1 to about 50:1, and wherein the substrate is a component for gas delivery or fluid delivery.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation-in-part of U.S. patent applicationSer. No. 17/090,770, filed Nov. 5, 2020, which claims benefit of U.S.provisional patent application Ser. No. 63/091,759, filed Oct. 14, 2020,both of which are herein incorporated by reference in their entirety.

FIELD

Embodiments of the present disclosure generally relate to substrateprocessing equipment.

BACKGROUND

Deposition and etch chambers (process chambers) are typically used inthe manufacturing of semiconductor devices. Some substrates disposedwithin these process chambers include holes. For example, a gasdistribution plate for use in a process chamber may include holes withhigh aspect ratios to distribute one or more process fluids within theprocess chamber. Holes with high aspect ratios reduce or prevent plasmabackflow. Traditional methods of fabricating these holes utilize amechanical method such as ultrasonic impact grinding or mechanicaldrilling. However, these methods have to be done slowly to avoid damageand meet tolerance requirements, and therefore, are expensive.

Accordingly, the inventors have provided improved methods and apparatusfor forming holes through a substrate for use as process chambercomponents.

SUMMARY

Embodiments of a method of forming one or more holes in a substrate foruse as a process chamber component are provided herein. In someembodiments, a method of forming one or more holes in a substrate foruse as a process chamber component include forming the one or more holesin the substrate with one or more laser drills using at least one of apercussion drilling, a trepanning, or an ablation process, wherein eachof the one or more holes have an aspect ratio of about 1:1 to about50:1, and wherein the substrate is a component for gas delivery or fluiddelivery.

In some embodiments, a method of forming one or more holes in asubstrate for use in a process chamber, includes: placing the substrateon a substrate support, wherein the substrate is a gas distributionplate comprising silicon; and forming the one or more holes in thesubstrate with one or more laser drills using at least one of apercussion drilling, a trepanning, or an ablation process.

In some embodiments, an apparatus for forming holes in a substrate foruse in a process chamber, including: a substrate support having one ormore retaining surfaces for holding the substrate and a central openingto expose a bottom surface of the substrate, wherein the substratesupport is configured to at least one of translate along an elongateaxis of the substrate or rotate about a central axis of the substratesupport; and one or more laser drills disposed at least one of above orbelow the substrate support, wherein the one or more laser drills areconfigured to direct photon energy towards the substrate with a pulseduration of about 1.0 nanosecond or less and with a pulse energy ofabout 1.0 to about 8.0 millijoules.

Other and further embodiments of the present disclosure are describedbelow.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present disclosure, briefly summarized above anddiscussed in greater detail below, can be understood by reference to theillustrative embodiments of the disclosure depicted in the appendeddrawings. However, the appended drawings illustrate only typicalembodiments of the disclosure and are therefore not to be consideredlimiting of scope, for the disclosure may admit to other equallyeffective embodiments.

FIG. 1 depicts a flowchart of a method of forming holes in a substratefor use in a process chamber in accordance with some embodiments of thepresent disclosure.

FIG. 2A depicts a schematic side view of a single-side hole formingapparatus in accordance with some embodiments of the present disclosure.

FIG. 2B depicts a schematic top view of a single-side hole formingapparatus in accordance with some embodiments of the present disclosure.

FIG. 3A depicts a cross-sectional view of a portion of a substrate inaccordance with some embodiments of the present disclosure.

FIG. 3B depicts a cross-sectional view of a portion of a substrate inaccordance with some embodiments of the present disclosure.

FIG. 3C depicts a cross-sectional view of a portion of a substrate inaccordance with some embodiments of the present disclosure.

FIG. 4 depicts a cross-sectional view of a substrate in accordance withsome embodiments of the present disclosure.

FIG. 5 depicts a schematic side view of a two-side hole formingapparatus in accordance with some embodiments of the present disclosure.

FIG. 6 depicts a schematic partial isometric view of a two-side holeforming apparatus in accordance with some embodiments of the presentdisclosure.

FIG. 7 depicts a schematic side view of a two-side hole formingapparatus in accordance with some embodiments of the present disclosure.

FIG. 8 depicts a flowchart of a method of forming holes in a substratefor use in a process chamber in accordance with some embodiments of thepresent disclosure.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. The figures are not drawn to scale and may be simplifiedfor clarity. Elements and features of one embodiment may be beneficiallyincorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

Embodiments of methods and apparatus of forming one or more holes in asubstrate for use as a process chamber component are provided herein.The substrate may a component for gas or fluid delivery, for example, agas distribution plate, a showerhead, an upper electrode, a coolingplate, or any other suitable process chamber component having one ormore holes therethrough. In some embodiments, the substrate may be acomponent for use in a plasma process chamber, for example, a dielectricetch process chamber. In some embodiments, the substrate may be acomponent for use in a deposition chamber. The methods and apparatusprovided herein advantageously employ laser drilling to provide improvedprecision of holes (tolerance for hole diameter and true precision), andimproved consistency from hole to hole and part to part. The methods andapparatus provided herein may also advantageously provide improved holequality with reduced sub-surface damage which also results inelimination of other processing steps used in traditional methods, suchas, for example, chemical etching and a polishing step.

FIG. 1 depicts a flowchart of a method 100 of forming holes in asubstrate for use in a process chamber in accordance with someembodiments of the present disclosure. In some embodiments, the method100 may be performed by using the hole forming apparatus 200 of FIG.2A-2B. At 102, one or more holes are formed in a substrate (e.g.,substrate 208) for use in a process chamber with one or more laserdrills (e.g., one or more laser drills 215) using at least one of apercussion drilling, a trepanning, or an ablation process, wherein eachof the one or more holes (e.g., one or more holes 214) have an aspectratio of about 1:1 to about 50:1. In some embodiments, each of the oneor more holes have an aspect ratio of about 10:1 to about 50:1. In someembodiments, each of the one or more holes have an aspect ratio of about30:1 to about 50:1, or about 25:1 to about 50:1.

In some embodiments, the substrate is made of silicon, silicon carbide,aluminum, nickel, molybdenum, or a ceramic material. The substrate maybe a gas distribution plate, a showerhead, an upper electrode, or anyother suitable substrate for use in a process chamber having one or moreholes therethrough. In some embodiments, the substrate has a thicknessof about 0.70 mm to about 20 mm. In some embodiments, the substrate hasa thickness of about 5 mm to about 20 mm. In some embodiments, thesubstrate has a thickness of about 8 to about 12 mm. In someembodiments, the substrate has a thickness of about 0.70 mm to about 10mm. In such embodiments, the one or more holes may be formed viasingle-side drilling from a first side (e.g., first side 250) of thesubstrate to a second side (e.g., second side 260) of the substrate. Insome embodiments, the substrate has a thickness of about 10 mm to about20 mm. In some embodiments, the one or more holes may be formed viadouble-sided drilling from both the first side of the substrate and thesecond side of the substrate. In some embodiments, the substrate 208 hasa substantially uniform thickness. In some embodiments, the substrate208 may have a thickness that varies (e.g., see FIG. 4).

In some embodiments, a purge gas is advantageously directed to the oneor more holes while drilling the one or more holes to purge out ablatedmaterial. The purge gas helps minimize re-deposition and helps tocontrol a shape and dimension of the one or more holes. The purge gasmay be directed to the one or more holes simultaneously while drillingthe one or more holes. The purge gas may be introduced around a laserbeam of the one or more laser drills and be directed directly to the oneor more holes. The purge gas may be any suitable gas, for example aninert gas such as nitrogen gas or argon gas.

FIG. 2A depicts a schematic side view and FIG. 2B is a schematic topview of a top view of a single-side hole forming apparatus 200 forperforming 102 in accordance with some embodiments of the presentdisclosure. The hole forming apparatus 200 includes a substrate 208disposed on a substrate support 204. In some embodiments, the substratesupport 204 may rotate about a central axis 212 to rotate the substrate208. In some embodiments, the substrate support 204 is configured tomove in a lateral direction 202 along an elongate axis orthogonal to thecentral axis 212 to move the substrate 208. The substrate support 204may be supported by one or more legs 206. In some embodiments, the oneor more legs 206 comprises two legs that are rotatably coupled to thesubstrate support 204 on either side of the substrate support 204. Thesubstrate support 204 may move in the lateral direction 202 with respectto the one or more legs 206.

The substrate 208 includes a second side 260 facing the substratesupport 204 and a first side 250 opposite the second side 260. Thesubstrate support 204 includes one or more retaining surfaces forholding the substrate 208 and a central opening 228 to expose the secondside 260, or bottom surface, of the substrate 208. In some embodiments,the one or more retaining surfaces is an annular ledge that extends intothe central opening 228. In some embodiments, as shown in FIG. 2B, theone or more retaining surfaces include a plurality of mounting tabs 216extending into the central opening 228.

One or more laser drills 215 are disposed above the substrate support204. In some embodiments, the hole forming apparatus 200 includes anenclosure 210, where the substrate support 204 is disposed within theenclosure 210. In some embodiments, at least one of the one or morelaser drills 215 are coupled to a top wall of the enclosure 210.

In some embodiments, the one or more laser drills 215 are configured tomove in a lateral direction 226 (e.g., up/down/left/right) with respectto the substrate support 204. In some embodiments, the one or more laserdrills 215 are configured to rotate with respect to the substrate 208about a central axis 224 of the one or more laser drills 215. In someembodiments, the central axis 224 of the one or more laser drills 215 isparallel to the central axis 212 of the substrate 208. In someembodiments, the one or more laser drills 215 are configured to tiltalong an axis orthogonal to the central axis 224 to perform off-axisdrilling of the substrate 208 (see FIG. 3C).

The one or more laser drills 215 are configured to direct photon energy222 to remove material from the substrate 208 to form one or more holes214. In some embodiments, the one or more holes 214 are arranged in asuitable pattern for gas delivery or fluid delivery. For example, theone or more holes 214 may be one hole disposed at a central region ofthe substrate 208, a plurality of holes disposed at regular intervalsalong one or more circles, disposed in a rectilinear grid, disposed in apattern having a greater concentration of holes in a peripheral regionas compared to a central region, or any other suitable pattern. WhileFIG. 2B depicts the one or more holes 214 having a circularcross-sectional shape, the one or more holes 214 may have an oval,rectangular, or other cross-sectional shape.

In some embodiments, the one or more holes 214 include a plurality ofsets of holes, where each set of the plurality of sets of holes includeone or more holes that make up the one or more holes 214. For example,the one or more holes 214 includes a first set 252 of one or more holes(set of three holes shown in FIG. 2B). In some embodiments, each laserdrill of the one or more laser drills 215 comprises a single laser headto form a single hole. In some embodiments, each laser drill of the oneor more laser drills 215 comprises a plurality of laser heads to formmultiple holes (e.g., the first set 252) simultaneously.

For single-side drilling, the one or more laser drills 215 face thefirst side 250 of the substrate 208. For two-sided drilling, in someembodiments, the one or more laser drills 215 face the first side 250and the substrate 208 is then rotated so that the one or more laserdrills 215 face the second side 260 of the substrate 208. In someembodiments, as discussed in more detail with respect to FIG. 7, fortwo-sided drilling, the one or more laser drills 215 may comprise asingle laser drill or an array of laser drills comprising similar laserdrills oriented in the same direction. In some embodiments, the array oflaser drills may include a single power source. In some embodiments, thearray of laser drills may comprise a plurality of stand-alone laserdrills oriented in the same direction. The substrate 208 may be rotatedso that the single laser drill or the array of laser drills selectivelyface the first side 250 or the second side 260. In some embodiments, fortwo-sided drilling, the one or more laser drills 215 are disposed oneither side of the substrate support 204 so that the one or more laserdrills 215 face the first side 250 and the second side 260 of thesubstrate 208. Such a configuration is described in U.S. patentapplication Ser. No. 16/945,461, filed Jul. 31, 2020 and titled “METHODOF FORMING HOLES FROM BOTH SIDES OF SUBSTRATE”.

FIG. 5 depicts a schematic side view of a two-side hole formingapparatus in accordance with some embodiments of the present disclosure.In some embodiments, a second drill 230 and a third drill 240 aredisposed on opposite sides of the substrate support 204. In a two-sidedrilling position, as shown in FIG. 5, the second drill 230 faces thefirst side 250 of the substrate 208 and the third drill 240 faces thesecond side 260 of the substrate 208. In some embodiments, the seconddrill 230 faces the second side 260 and the third drill 240 faces thefirst side 250. In such embodiments, the second drill 230 and the thirddrill 240 are used to drill first partial holes from the first side 250of the substrate 208 to a first location disposed between the first side250 and the second side 260 of the substrate 208 and to drill secondpartial holes from the second side 260 of the substrate 208 to the firstlocation (described in more detail below in FIGS. 3B-3C). In someembodiments, the second drill 230 and the third drill 240 both formroughly half of each hole of the one or more holes 214 to advantageouslyreduce the work and precision required from each of the second drill 230and the third drill 240.

In some embodiments, the second drill 230 is configured to move in alateral direction 236 (e.g., up/down/left/right) with respect tosubstrate support 204. In some embodiments, the third drill 240 isconfigured to move in a lateral direction 246 (e.g., up/down/left/right)with respect to substrate support 204. In some embodiments, the seconddrill 230 is configured to rotate with respect to the substrate 208along a central axis 234 of the second drill 230. In some embodiments,the third drill 240 is configured to rotate with respect to thesubstrate 208 along a central axis 244 of the third drill 240. The firstdrill 220, the second drill 230, and the third drill 240 may be disposedinside or outside the enclosure 210.

In some embodiments, the central axis 234 of the second drill 230 isparallel to the central axis 212 of the substrate 208 when the substrate208 is in a two-side drilling position. In some embodiments, the centralaxis 244 of the third drill 240 is parallel to the central axis 212 ofthe substrate 208 when the substrate 208 is in a two-side drillingposition. In some embodiments, the second drill 230 and the third drill240 are laser drills configured to direct photon energy 332 and photonenergy 342, respectively, to remove material from the substrate 208 toform the one or more holes 214. In some embodiments, the second drill230 has a plurality of laser heads to at least partially form multipleholes of the one or more holes 214 simultaneously. In some embodiments,the third drill 240 has a plurality of laser heads to at least partiallyform multiple holes of the one or more holes 214 simultaneously.

FIG. 6 depicts a schematic partial isometric view of a two-side holeforming apparatus in accordance with some embodiments of the presentdisclosure. The substrate support 204 is not shown in FIG. 6 to aid invisibility. In some embodiments, the one or more holes 214 include aplurality of sets of holes. In some embodiments, the plurality of setsof holes of the one or more holes 214 includes a first set 610, a secondset 620, and a third set 630. In some embodiments, the second drill 230is configured to drill the first set 610 of the plurality of sets ofholes and then finishes another set of the plurality of sets of holesand continues repetitively until all of the one or more holes 214 arepartially drilled from the first side 250 of the substrate 208. In someembodiments, the third drill 240 is configured to drill the second set620 of the plurality of sets of holes and then finishes another set ofthe plurality of sets of holes and continues repetitively until all ofthe one or more holes 214 are partially drilled from the second side 260of the substrate 208.

The second drill 230 and the third drill 240 are each configured to atleast partially form all of the one or more holes 214 so that together,the second drill 230 and the third drill 240 form the one or more holes614. In some embodiments, as shown in FIG. 6, the second drill 230 isconfigured to at least partially drill the first set 610 of the one ormore holes 214 simultaneously while the third drill 240 is configured toat least partially drill the second set 620 of the one or more holes214. In some embodiments, the second drill 230 and the third drill 240do not simultaneously form the same hole of the one or more holes 214.

In some embodiments, the substrate 208 rotates about the central axis212 after drilling a set of the plurality of sets of holes using atleast one of the second drill 230 and the third drill 240. In someembodiments, at least one of the second drill 230 or the third drill 240moves (e.g., rotationally or laterally with respect to the substrate208) between drilling of each set of the plurality of sets of holes. Insome embodiments, the second drill 230 and the third drill 240 may movein a combination of lateral and rotation directions between each set ofthe plurality of sets of holes.

Each of the first set 610, the second set 620, and the third set 630 mayinclude two or more holes of the one or more holes 214 (sets of twoholes shown in FIG. 6). In some embodiments, the second drill 230 isconfigured to at least partially drill each hole of the first set 610simultaneously. In some embodiments, the third drill 240 is configuredto at least partially drill each hole of the second set 620simultaneously. In some embodiments, the second drill 230 is configuredto at least partially drill each hole of the first set 610simultaneously with the third drill 240 at least partially drilling eachhole of the second set 620. One or more of the substrate 208, the seconddrill 230, or the third drill 240 may be moved to at least partiallyform the third set 630.

FIG. 7 depicts a schematic side view of a two-side hole formingapparatus in accordance with some embodiments of the present disclosure.As depicted in FIG. 7, the one or more laser drills 215 comprises asingle laser drill or single array of laser drills, for example thefirst drill 220, coupled to a sidewall of the enclosure 210. In someembodiments, the one or more laser drills 215 comprises a single laserdrill or single array of laser drills coupled to a top wall of theenclosure 210 and configured for double sided drilling. In someembodiments, the substrate support 204 may be configured to rotate aboutan elongate axis 710 so that the one or more laser drills 215selectively face the first side 250 or the second side 260 of thesubstrate 208. In some embodiments, the elongate axis 710 isperpendicular to the central axis 212. As such, in some embodiments,double sided drilling may be achieved without the second drill 230 andthe third drill 240.

Referring back to FIG. 1, in some embodiments, forming the one or moreholes comprises forming one or more rough holes having a first sizethrough the substrate. In some embodiments, the one or more rough holesmay be formed via the percussion drilling process using the one or morelaser drills or a mechanical drilling process. The percussion drillingprocess generally comprises repeatedly pulsing the one or more laserdrills with a pulse energy for a pulse duration. With each pulse, aphoton beam is directed at the substrate to remove material. In someembodiments, the one or more laser drills direct a photon beam over afirst set of one or more rough holes to be formed. In some embodiments,for single-side drilling, the pulses are repeated until the first set ofone or more rough holes are formed through the substrate. The mechanicaldrilling process may generally comprises using a rotary tool to form theone or more rough holes.

FIG. 8 depicts a flowchart of a method 800 of forming holes in asubstrate for use in a process chamber in accordance with someembodiments of the present disclosure. The inventors have observed thatlaser drilling may become inefficient when drilling from the first sideall the way through the substrate for certain substrate thicknesses. Themethod 800 at 802 includes using one or more laser drills (e.g., one ormore laser drills 215) to drill the substrate (e.g., substrate 208) froma first side (e.g., first side 250) of the substrate to a first locationbetween the first side and a second side (e.g., second side 260) of thesubstrate to form one or more rough holes partially through thesubstrate. In some embodiments, the substrate has a thickness of about 5mm to about 20 mm. In some embodiments, the substrate has a thickness ofabout 8 to about 12 mm. In some embodiments, the first location is alocation after which drilling speed via the one or more laser drillswould be less than a threshold drilling speed. In some embodiments, thethreshold drilling speed is about 0.1 mm per second or faster. In someembodiments, the first location is about halfway between the first sideand the second side, so that, for example, the one or more rough holesextend about 40 percent to about 60 percent of the thickness of thesubstrate. In some embodiments, the first location is less than 8 mmfrom the first side. In some embodiments, the first location is about 4to about 6 mm from the first side.

The one or more rough holes may be drilled in any suitable manner toobtain a desired pattern. For example, the one or more rough holes maybe drilled one hole at a time, a plurality of holes at a time, or setsof a plurality of holes at a time such as discussed above with respectto FIG. 6. In some embodiments, the substrate may then subsequently berotated so that the second side faces the one or more laser drills. Insome embodiments, the substrate is rotated about an elongate axis (e.g.,elongate axis 710) of a substrate support (e.g., substrate support 204).

At 804, the method 800 includes using the one or more laser drills todrill the substrate from the second side to at least the first locationto form the one or more holes through the substrate. In someembodiments, the one or more holes have an aspect ratio similar to asdiscussed above. In some embodiments, the method 800 includes aligningthe one or more laser drills with a location of the one or more roughholes prior to drilling the one or more holes from the second side.Aligning the one or more laser drills may include moving the one or morelaser drills, moving the substrate, or moving both the one or more laserdrills and the substrate. In some embodiments, a same laser drill orarray of laser drills is used to drill the one or more rough holes fromthe first side and the one or more holes from the second side (see FIG.7).

In some embodiments, the one or more laser drills may drill thesubstrate from the second side to the first location to form theplurality of holes through the substrate. In some embodiments, the oneor more laser drills may drill the substrate from the second side pastthe first location to the first side to form the plurality of holesthrough the substrate. In some embodiments, a diameter of the one ormore rough holes that extend from the first side partially through thesubstrate is less than a diameter of the plurality of holes. Forexample, the one or more rough holes may have a diameter of about 280 toabout 295 microns while the plurality of holes may have a diameter ofabout 295 to about 305 microns. As such, drilling from the first side tothe first location comprises blind drilling, and drilling from thesecond side comprises punch-through drilling or a combination ofpunch-through drilling and hole cleanup.

In some embodiments, at least one of the one or more laser drills or thesubstrate are moved (e.g. along lateral direction 202 or lateraldirection 226) so that the one or more laser drills may direct a photonbeam over a second set of one or more rough holes to be formed. Theaforementioned process continues until all of the one or more roughholes are formed. In some embodiments, the percussion drilling processcomprises a pulse duration of about 1.0 nanosecond or less. In someembodiments, the percussion drilling process is performed with a pulseenergy of about 1.0 to about 8.0 millijoules. In some embodiments, theone or more holes are drilled at a speed of about 0.1 mm per second orfaster, for example, to about 0.8 mm per second. The one or more holesare drilled faster via laser drilling as compared to conventionalmethods, advantageously providing a cost improvement.

In some embodiments, forming the one or more holes comprises using theone or more laser drills to finish the one or more rough holes via atleast one of an ablation or trepanning process. An ablation processgenerally comprises removing material from a solid surface byirradiating the surface with photon energy. The ablation process maycomprise a helical ablation process, where material is removed along ahelical path. A trepanning process generally comprises moving a laserhead in various geometries to remove material, for example, a circulargeometry at various radii to remove material. In other examples, thetrepanning process may comprise moving the laser head in a non-circulargeometry, such as, an oval, a rectangular, or an amorphous geometry toremove material. As such, the ablation or trepanning process increases adiameter or cross-sectional area of the one or more rough holes from thefirst size to a larger second size while providing improved hole qualitywith reduced sub-surface damage.

Finishing via the ablation or trepanning process may comprise at leastone of reducing a roughness of the one or more rough holes, increasing aroundness of the one or more rough holes, increasing a diameter orcross-sectional area of the one or more rough holes, or making the oneor more rough holes more uniform in diameter or cross-sectional areawith respect to each other (i.e., improved consistency from hole tohole). In some embodiments, a concentricity of the finished one or moreholes is up to about 25% more concentric than a concentricity of the oneor more rough holes. In some embodiments, a roundness of the one or morerough holes is about 25% greater than a roundness of the finished one ormore holes. In some embodiments, a diameter of the finished one or moreholes is up to about 50% larger than a diameter of the one or more roughholes. In some embodiments, the trepanning process or the ablationprocess comprises a pulse duration of about 1.0 nanosecond or less. Insome embodiments, the trepanning process or the ablation process isperformed with a pulse energy of about 1.0 to about 8.0 millijoules. Insome embodiments, same ones of the one or more laser drills may be usedto perform the percussion drilling and ablation or trepanning processes.In some embodiments, different ones of the one or more laser drills maybe used to perform the percussion drilling and ablation or trepanningprocesses.

In some embodiments, where the substrate has a thickness of about 10.0mm to about 20.0 mm, the one or more holes may be formed via double-sidedrilling from both sides (e.g., first side 250 and second side 260) ofthe substrate. In such embodiments, the one or more laser drills aredisposed on either side of the substrate and are used to drill firstpartial holes (e.g., first partial holes 310) from a first side of thesubstrate to a first location (e.g., first location 308) disposedbetween the first side and a second side of the substrate and to drillsecond partial holes (e.g., second partial holes 320) from the secondside of the substrate to the first location. In some embodiments, thefirst partial holes and the second partial holes are formed via anablation process. In some embodiments, the first partial holes areformed via a percussion drilling process to form rough first partialholes, followed with an ablation process to finish (as described above)the rough first partial holes. In some embodiments, the second partialholes are formed via a percussion drilling process to form rough secondpartial holes, followed with an ablation process to finish (as describedabove) the rough second partial holes. In some embodiments, the firstpartial holes are drilled to a larger diameter than the second partialholes to provide tolerance so that the second partial holes may meetwith the first partial holes.

FIG. 3A depicts a cross-sectional view of a portion of a substrate inaccordance with some embodiments of the present disclosure. FIG. 3Adepicts a hole of the one or more holes 214 after the ablation ortrepanning process. In some embodiments, each hole of the one or moreholes 214 has a substantially constant diameter. In some embodiments,the one or more holes 214 taper inward, outward, or both inward andoutward from the first side 250 to the second side 260 (i.e., having adiameter or cross-sectional area that varies along a length of thehole). In some embodiments, a thickness 340 of the substrate 208 isabout 0.70 mm to about 10.0 mm. In some embodiments, a diameter 330 ofthe one or more holes 214 is about 75.0 micrometers to about 750.0micrometers.

FIG. 3B depicts a cross-sectional view of a portion of a substrate inaccordance with some embodiments of the present disclosure. FIG. 3Bdepicts a hole of the one or more holes 214 formed via two-sideddrilling after the ablation or trepanning process. In some embodiments,the one or more holes 214 include first partial holes 310 extending fromthe first side 250 of the substrate 208 to a first location 308 disposedbetween the first side 250 and the second side 260. In some embodiments,the one or more holes 214 include second partial holes 320 extendingfrom the second side 260 to the first location 308 to intersect with thefirst partial holes 310. In some embodiments, the second partial holes320 have a diameter or cross-sectional area greater than the firstpartial holes 310. In some embodiments, a thickness 350 of the substrate208 is greater than about 10.0 mm.

FIG. 3C depicts a cross-sectional view of a portion of a substrate inaccordance with some embodiments of the present disclosure. In someembodiments, the one or more holes 214 extend at an angle of incidence360 with respect to a vertical axis 312 of the substrate 208. In someembodiments, the vertical axis 312 is parallel to the central axis 212.In some embodiments, the angle of incidence 360 is between about zerodegrees to about ninety degrees. In some embodiments, the angle ofincidence 360 is between about zero degrees to about sixty degrees. Theone or more holes 214 may extend at the angle of incidence 360 to directgas flow in a desired manner. At least one laser head of the one or morelaser drills 215 may be rotated or tilted to direct a photon beam at theangle of incidence 360 to form the one or more holes 214 that extend atthe angle of incidence 360 through the substrate 208.

FIG. 4 depicts a cross-sectional view of a substrate 400 in accordancewith some embodiments of the present disclosure. The substrate 400 maybe a gas delivery plate for use in a process chamber, for example, adielectric etch chamber. In some embodiments, the substrate 400 is thesubstrate 208. The substrate 400 includes a first side 450 and a secondside 460 opposite the first side 450. The substrate 400 includes one ormore holes 410 extending from the first side 450 to the second side 460.The one or more holes 410 may be the one or more holes 214. In someembodiments, the one or more holes 402 may be arranged along one or moreconcentric rings. For example, the substrate 400 may include a first setof holes 402 of the one or more holes 410 along arranged along a firstring. The substrate 400 may include a second set of holes 404 of the oneor more holes 410 arranged along a second ring disposed radially outwardof the first ring. In some embodiments, the second ring is concentricwith the first ring. In some embodiments, the substrate 400 may includea third set of holes 406 of the or more holes 410 arranged along a thirdring disposed radially outward of the first ring and the second ring.

The first set of holes 402 may extend through the substrate 400substantially vertically downward (as depicted in FIG. 4) or may extendoff-axis, for example, radially inward and downward or radially outwardand downward. The second set of holes 404 may extend through thesubstrate 400 substantially vertically downward (as depicted in FIG. 4)or may extend off-axis, for example, radially inward and downward orradially outward and downward. The third set of holes 406 may extendthrough the substrate 400 substantially vertically downward or mayextend off-axis, for example, radially inward and downward (as depictedin FIG. 4) or radially outward and downward.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof.

1. A method of forming one or more holes through a substrate for use asa process chamber component, comprising: using one or more laser drillsto drill the substrate from a first side of the substrate to a firstlocation between the first side and a second side of the substrate toform one or more rough holes partially through the substrate, whereinthe first location is a location after which drilling speed via the oneor more laser drills would be less than a threshold drilling speed; andusing the one or more laser drills to drill the substrate from thesecond side to at least the first location to form the one or more holesthrough the substrate, wherein each of the one or more holes have anaspect ratio of about 30:1 to about 50:1, and wherein the substrate is acomponent for gas delivery or fluid delivery.
 2. The method of claim 1,wherein the substrate is drilled using at least one of a percussiondrilling process, a trepanning process, or an ablation process. 3.(canceled)
 4. The method of claim 1, wherein the first location is abouthalfway between the first side and the second side.
 5. The method ofclaim 1, wherein the first location is about 4 to ab 6 mm from the firstside.
 6. The method of claim 1, wherein the substrate has a thickness ofabout 8 mm to about 12 mm.
 7. The method of claim 1, further comprising:rotating the substrate after drilling the substrate from the first sideso that the second side of the substrate faces the one or more laserdrills; and aligning the one or more laser drills with a location of theone or more rough holes prior to drilling the substrate from the secondside.
 8. The method of claim 1, wherein the one or more laser drillscomprise a single laser drill or a single array of laser drills.
 9. Themethod of claim 1, wherein drilling the substrate from the second sidecomprises finishing the one or more rough holes to form the one or moreholes, wherein finishing the one or more rough holes comprises at leastone of reducing a roughness of the one or more rough holes, increasing aroundness of the one or more rough holes, increasing a diameter of theone or more rough holes, or making the one or more rough holes moreuniform in diameter with respect to each other.
 10. A method of formingone or more holes through a substrate for use as a process chambercomponent, comprising: placing the substrate on a substrate support;using one or more laser drills to drill the substrate from a first sideof the substrate to a first location between the first side and a secondside of the substrate to form a one or more rough holes partiallythrough the substrate, wherein the first location is less than 8 mm fromthe first side, and wherein the first location is a location after whichdrilling speed via the one or more laser drills would be less than athreshold drilling speed; rotating the substrate along an elongate axisof the substrate support so that the second side of the substrate facesthe one or more laser drills; and using the one or more laser drills todrill the substrate from the second side to at least the first locationto form the one or more holes through the substrate, wherein each of theone or more holes have an aspect ratio of about 30:1 to about 50:1 andwherein the substrate is a component for gas delivery or fluid delivery.11. The method of claim 10, wherein drilling the substrate from thesecond side comprises using a percussion drilling process or an ablationprocess with a pulse duration of about 1.0 nanosecond or less with apulse energy of about 1.0 to about 8.0 millijoules.
 12. The method ofclaim 10, wherein the substrate has a thickness of about 8 mm to about12 mm.
 13. The method of claim 10, further comprising directing a purgegas to the one or more holes while forming the one or more holes. 14.The method of claim 10, wherein the threshold drilling speed is about0.1 mm per second or faster.
 15. The method of claim 10, wherein the oneor more holes extend at an angle of incidence relative to a verticalaxis of the substrate between about zero degrees to about ninetydegrees.
 16. The method of claim 10, wherein the substrate is made ofsilicon, silicon carbide, aluminum, nickel, molybdenum, or a ceramicmaterial. 17-20. (canceled)